专利名称：Magnetic tunnel junctions发明人：Wei Chen,Witold Kula,Jonathan D.
Harms,Sunil S. Murthy
申请号：US14563303申请日：20141208公开号：US09373779B1公开日：20160621
专利附图：
摘要：A magnetic tunnel junction includes a conductive first magnetic electrode thatincludes magnetic recording material. A conductive second magnetic electrode is spacedfrom the first electrode and includes magnetic reference material. A non-magnetic tunnel
insulator material is between the first and second electrodes. The magnetic referencematerial of the second electrode includes a non-magnetic region comprising elementaliridium. The magnetic reference material includes a magnetic region comprising
elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnelinsulator material.
申请人：Micron Technology, Inc.
地址：Boise ID US
国籍：US
代理机构：Wells St. John, P.S.
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